parameter symbol value unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 7.0 v collector current i c 15 a base current i b 7 a total dissipation at p tot 90 w max. operating junction temperature t j 150 o c storage temperature t stg -55~150 o c TIP3055 / tip2955 description parameter symbol test conditions min. typ. max. unit collector cut-off current i ceo v cb =50v, i e =0 0.7 ma emitter cut-off current i ebo v eb =7.0v, i c =0 5.0 ma collector-emitter sustaining voltage v ceo i c =30ma, i b =0 60 v dc current gain h fe(1) v ce =4.0v, i c =4.0a 20 70 h fe(2) v ce =4.0v, i c =10a 5 collector-emitter saturation voltage v ce(sat) i c =4.0a,i b =0.4a 1.0 v i c =10a,i b =3.3a 3.0 base-emitter voltage v be v ce =4.0v,i c =4.0a 1.8 v transition frequency f t v ce =10v,i c =0.5a 3 mhz complementary silicon high power ttransistors product specification the TIP3055 is a silicon epitaxial-base planar npn transistor mountend in to-247 plastic package. it is intented for power switching circuits, series and shunt regulators, output stages and hi-fi amplifiers. the complementary pnp type is the tip2955. electrical characteristics absolute maximum ratings to-247 ( ta = 25 c) o ( ta = 25 c) o tiger electronic co.,ltd
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